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IGBT單管
Part Number Download Status Product Grade Diode Type

VCES

(V)

Ic@Tc=100℃

(A)

Ic@Tc=25℃

(A)

Vcesat

(V)

Switching Frequency

(KHZ)

Eon

(mJ)

Eoff

(mJ)

Short Current Withstand Time

(us)

 Type Package
Active
Ready
automotive
industrial
SiC
silicon
0~8
20~45
8~20
FST2.0
FST3.0
TO-220FA
TO-247
TO-247plus
TO-252
TO-263
TO-263FC
TO-3P
CGWT40N120F2KAD
Active
 industrial
 silicon
 1200
 40
 80
 1.7
 20~45
 3
 1.4
 5
 FST2.0
 TO-247
CGWT40N120F2LAD
Active
 industrial
 silicon
 1200
 40
 80
 1.5
 0~8
 2.8
 1.9
 7
 FST2.0
 TO-247
CGWT40N120F2LAN
Active
 industrial
 -
 1200
 40
 80
 1.5
 0~8
 2.5
 1.7
 5
 FST2.0
 TO-247
CGWT40N120F2LANM
Active
 automotive
 -
 1200
 40
 80
 1.5
 0~8
 2.5
 1.7
 5
 FST2.0
 TO-247
CGWT40N65F2KA
Active
 industrial
 silicon
 650
 40
 80
 1.7
 20~45
 1
 0.32
 7
 FST2.0
 TO-247
CGWT40N65F2KAD
Active
 industrial
 silicon
 650
 40
 80
 1.7
 20~45
 1.23
 0.34
 5
 FST2.0
 TO-247
CGWT40N65F2KAN
Active
 industrial
 -
 650
 40
 80
 1.7
 20~45
 0.34
 1.23
 5
 FST2.0
 TO-247
CGWT40N65F2KAQ
Ready
 industrial
 silicon
 650
 40
 80
 1.7
 20~45
 1.2
 0.32
 7
 FST2.0
 TO-247
CGWT80N65F2KAD
Active
 industrial
 silicon
 650
 80
 100
 1.75
 20~45
 2.69
 0.87
 7
 FST2.0
 TO-247
CGWT80N65F2KAS
Active
 industrial
 SiC
 650
 80
 100
 1.7
 20~45
 1.87
 0.99
 7
 FST2.0
 TO-247